2013年 度 |
行事 | 発表者等 | 講演・発表内容等 |
12/28 (土) |
研究室忘年会 | ||
11/28 (木) |
山口（実）研との対抗ボー リング大会 |
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11/14 (木) |
The 12th International Symposium on Advanced Technology (ISAT-12) |
K. Tanuma, T. Yamaguchi, T. Hatakeyama, T. Onumaand T. Honda |
Ga2O3and In2O3growth by mist CVD |
11/14 (木) |
The 12th International Symposium on Advanced Technology (ISAT-12) |
T. Hatakeyama T. Yamaguchi, D. Tajimi, Y. Sugiura, R. Amiya, T. Onuma and T. Honda |
Mist CVD growth of alpha-Ga2O3 on sapphire substrates and RF-MBE growth of GaN on alpha- Ga2O3/sapphire templates Distingish Poster Award受賞 |
11/13 (水) |
The 2nd International Conference on Advanced Electromaterials (ICAE2013) |
S. Ohsawa, D. Tajimi, T. Yamaguchi, T. Honda |
(LT-3935) RF-MBE Growth of GaN/Al Heterostructures on 4H-SiC |
11/13 (水) |
The 2nd International Conference on Advanced Electromaterials (ICAE2013) |
R. Amiya, Y. Sugiura, D. Tajimi, T. Yamaguchi, T. Honda |
(LT-3017) Impact of Native Surface Oxide on GaN Layers for their Surface Band Bending Best Poster Award受賞 |
11/13 (水) |
The 2nd International Conference on Advanced Electromaterials (ICAE2013) |
S. Fujioka, R. Amiya, T. Onuma, T. Yamaguchi, T. Honda |
(LT-2900) Effects of (Al,Ga)Ox/GaN Interface States on GaN-based Schottky-type Light- emitting Diodes Best Poster Award受賞 |
11/13 (水) |
The 2nd International Conference on Advanced Electromaterials (ICAE2013) |
T. Yamaguchi | (LT-3) Chair person |
11/13 (水) |
The 2nd International Conference on Advanced Electromaterials (ICAE2013) |
T. Yamaguchi, K. Wang, T. Honda, E. Yoon, T. Araki, Y. Nanishi |
(Invited/LT-3466)Growth of InN and Related Alloys using DERI Method toward Fabrication of Optoelectronics Devices |
11/07 (木) |
第43回結晶成長国内会議 | 田沼圭亮、山口智広、畠山 匠、尾沼猛儀、本田徹 |
(07PS17) ミストCVD法を用いたGa2O3及びIn2O3 成長 |
11/07 (木) |
第43回結晶成長国内会議 | 山口智広、畠山匠、多次見 大樹、尾沼猛儀、本田徹 |
(07aB04) Ga2O3上GaN成長とGaN上Ga2O3成長 |
10/20 (土) |
諏訪市出張理科教室 | ＬＥＤで遊ぼう〜3原色ＬＥＤで様々な色を作りだそ う〜 |
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09/18 (水) |
2013 JSAP-MRS Joint Symposia |
T. Araki, E. Yoon, T. Yamaguchi, Y. Nanishi |
(18p-M6-6) MBE Growth of Thick InN and InGaN Films using DERI Method |
09/17 (火) |
第74回応用物理学会秋季 学術講演会 |
藤岡秀平、網谷良介、尾沼 猛儀、山口智広、本田徹 |
(17p-P7-8) GaN系ショットキー型発光ダイオードに おける(Al,Ga)Ox/GaN界面準位の影響 |
09/17 (火) |
第74回応用物理学会秋季 学術講演会 |
井村将隆、小出康夫、名西 やすし、荒木 努、山口智 広、山下良之、吉川英樹、小 林啓介、津田俊輔、長田貴 弘、武田寛之、A.L.Yang、金 子昌充、上松尚 |
(17p-P7-6) 硬X線光電子分光法を用いたMg-InN のエネルギーバンド分布評価 |
09/16 (月) |
2013 JSAP-MRS Joint Symposia |
T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura, T. Honda |
(16p-PM1-32) Use of alpha-Ga2O3/alpha-Al2O3 template in GaN film growth |
09/16 (月) |
第74回応用物理学会秋季 学術講演会 |
多次見大樹、奥秋良隆、畠 山匠、金子健太郎、藤田静 雄、尾沼猛儀、山口智広、本 田徹 |
(16p-P8-13) ミストCVD法を用いたGaN基板上への Ga2O3成長 |
09/16 (月) |
第74回応用物理学会秋季 学術講演会 |
網谷良介、多次見大樹、杉 浦洋平、山口智広、本田徹 |
(16p-B5-15) 表面酸化物のGaN表面フェルミ準位 と表面バンド曲がりに及ぼす影響 |
09/16 (月) |
第74回応用物理学会秋季 学術講演会 |
尾沼猛儀、藤岡秀平、山口 智広、東脇正高、佐々木公 平、増井建和、本田徹 |
(16p-B4-4) beta-Ga2O3結晶における青色発光強 度と抵抗率の相関 |
09/16 (月) |
第74回応用物理学会秋季 学術講演会 |
大澤真弥、多次見大樹、山 口智広、本田徹 |
(16a-B5-4) 4H-SiC上の疑似Al基板製作と疑似基 板上へのGaN RF-MBE成長 |
09/16 (月) |
第74回応用物理学会秋季 学術講演会 |
坂本正洋、王科、荒木努、名 西やすし、E.Yoon、山口智広 |
(16a-B5-3) RF-MBEを用いたInGaN成長の膜厚依 存性 |
09/16 (月) |
第74回応用物理学会秋季 学術講演会 |
山口智広 | (16a-B5-前半) 座長 |
09/11 (水) |
The 16th International |
T. Yasuno, H. Nagai, H.Hara, Y. Sugiura, T. Yamaguchi, M. Sato, T. Honda |
(We-P7) Fabricationof Ga-In-O films by Molecular Precursor Method and Their Future Application ofUV Transparent Electrodes |
09/ 2-4 |
研究室夏ゼミ | Guest：藤田先生・金子先生（京都大学）、上山先 生（名城大学）、織田様（ROCA株式会社） |
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08/27 (火) |
10th International Conference on Nitride Semiconductors 2013 (ICNS-10) |
T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura, T. Honda |
RF-MBE Growth and Characterization of GaN Films on alpha-Ga203/Sapphire Template |
08/ 22-23 |
工学院大学 理科教室 | LEDで遊ぼう〜３原色LEDで様々な色を作り出そう （電子工作）〜 LEDで遊ぼう〜体験コーナー〜（高橋研と合同演 示） |
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08/15 (木) |
The 16th Canadian Semiconductor Science and Technology Conference (CSSTC2013) |
T. Yamaguchi, K. Wang, T. Honda, E. Yoon, T. Araki, Y. Nanishi |
(Invited)RF-MBE Growth of InGaN Ternally Alloys: Advantage of DERI method |
08/14 (水) |
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17) |
T. Yamaguchi, T. Hatakeyama, D. Tajimi, Y. Sugiura, T. Onuma, T. Honda |
RF-MBE growth of GaN films on nitridated alpha- Ga2O3 buffer layer |
08/13 (水) |
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17) |
T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Masui, T. Honda |
Polarized Raman Spectra in beta-Ga2O3 Crystals |
07/22 (月) |
The WCU Korea-China Workshop on Nitride Semiconductors 2013 |
Y. Nanishi, T. Yamaguchi, T. Araki, E. Yoon |
(Invited/LED1-1)Recent Progress and issues of InN and InGaN Growth for Future Optoelectronic Devices |
07/15 (月) |
Journal of Applied Physics 114, 033505-1- 6 (2013) |
M. Imura, S. Tsuda, T. Nagata, H. Takeda, M. Liao, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, T. Araki, Y. Nanishi |
Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy |
07/11 (木) |
32nd Electronic Materials Symposium (EMS-32) |
T. Yasuno, T. Oda, H. Nagai, H. Hara, Y. Sugiura, T. Yamaguchi, M. Sato, T. Honda |
(Th6-5) Characterization of Ga-In-O films fabricated by molecular precursor method |
07/11 (木) |
32nd Electronic Materials Symposium (EMS-32) |
S. Osawa, T. Hatakeyama, D. Tajimi, T. Yamaguchi, T. Honda |
(Th3-16) The GaN growth on psude Aluminum templates by molecular beam epitaxy |
07/11 (木) |
32nd Electronic Materials Symposium (EMS-32) |
T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura, T. Honda |
(Th3-15) RF-MBE growth of GaN films on alpha- Ga2O3/sapphire template |
07/11 (木) |
32nd Electronic Materials Symposium (EMS-32) |
S. Fujioka, R. Amiya, T. Onuma, T. Yamaguchi, T. Honda |
(Th1-4) Effects of surface modification on emission property of GaN Schottky diodes |
07/11 (木) |
32nd Electronic Materials Symposium (EMS-32) |
R. Amiya, Y. Sugiura, D. Tajimi, T. Yamaguchi, T. Honda |
(Th1-3) Influence of native surface oxide on GaN surface band bending |
07/10 (水) |
32nd Electronic Materials Symposium (EMS-32) |
D. Tajimi, Y. Sugiura, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda |
(We2-17) Impact of ultra-thin InN layers in GaN matrix for light-emitting diodes with super weak waveguides |
07/10 (水) |
32nd Electronic Materials Symposium (EMS-32) |
Y. Sugiura, T. Yamaguchi, T. Honda, M. Higashiwaki |
(We1-6) RF-MBE growth of AlOx/AlN/GaN heterostructures |
6/22- 23 |
工学院大学出張科学教室 | ＠石巻工業高校（宮城県） | ３色LEDで様々な色を作り出そう（電子工作） |
06/22 (土) |
第５回窒化物半導体結晶 成長講演会 |
荒木努、山口智広、名西や すし |
(IN3) DERI法を応用したRF-MBEによるInGaN成長 と評価 |
06/22 (土) |
第５回窒化物半導体結晶 成長講演会 |
網谷良介、多次見大樹、杉 浦洋平、山口智広、本田徹 |
(ST23) 表面酸化物によるGaN表面フェルミ準位に 及ぼす影響 |
06/22 (土) |
第５回窒化物半導体結晶 成長講演会 |
多次見大樹、大澤真弥、山 口智広、本田徹 |
(ST21) RF-MBE法による疑似Al基板上へのGaN成 長 |
05/28 (火) |
E-MRS 2013 Spring Meeting |
T. Honda, T.Yamaguchi, D. Tajimi, S. Osawa, M. Hayashi |
(54) Compressively strained GaN growth on (0001) 4H-SiC with Al buffer by MBE |
05/21 （火） |
Journal of Crystal Growth 377, 123-126 (2013) |
T. Yamaguchi, N. Uematsu, T. Araki, T. Honda, E. Yoon, Y. Nanishi |
Growth of thick InGaN films with entire alloy composition using droplet elimination by radical- beam irradiation |
05/20 (月) |
The 40th International Symposium on Compound Semiconductors (ISCS2013) |
S. Osawa, D. Tajimi, T. Yamaguchi, T. Honda |
(MoPC-06-09) Aluminum layers grown on (0001) 4H-SiC for the GaN growth by molecular beam epitaxy |
05/20 (月) |
The 40th International Symposium on Compound Semiconductors (ISCS2013) |
T. Yamaguchi, D. Tajimi, M. Hayashi, T. Igaki, Y. Sugiura, T. Honda |
(MoPC-06-06) Effect of (GaN/AlN) ASF buffer layer in GaN growth on Al2O3 and silicon by RF- MBE |
05/20 (月) |
The 40th International Symposium on Compound Semiconductors (ISCS2013) |
Y. Sugiura, T. Yamaguchi, T. Honda, M. Higashiwaki |
(MoPC-06-03) In-situ RF-MBE growth of AlOx/ AlN/GaN heterostructures |
05/20 （月） |
Jpn. J. Appl. Phys. 52, 08JD01-1-3 (2013) |
A. Yang, Y. Yamashita, H. Yoshikawa, T. Yamaguchi, M. Imura, M. Kaneko, S. Ueda, O. Sakata, Y. Nanishi, and K. Kobayashi |
Investigation of the Effect of Oxygen on theNear- Surface Electron Accumulation in Nonpolar m- Plane (1010) InN Film by HardX-ray Photoelectron Spectroscopy |
05/14 (火) |
The 6th Asia-Pacific Workshop on Widegap Semiconductor (APWS2013) |
D. Tajimi, Y. Sugiura, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda |
(PT22) Growth of ultra-thin InN layers in GaN matrix for super weak waveguides |
04/27 (土) |
LED総合フォーラム2013 | 名西やすし、山口智広、荒木 努 |
(Invited)InNおよびIn-rich InGaNをベースとした 窒化物半導体による長波長発光デバイス開発へ の挑戦 |
04/25 (木) |
Conference on LED and Its Industrial Application ' 13 (LEDIA'13) |
T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Masui, T. Honda |
(LED4-3) Temperature Dependent Cathodo- Luminescence Spectraof beta-Ga2O3Crystals |
04/24 (水) |
Conference on LED and Its Industrial Application ' 13 (LEDIA'13) |
S. Osawa, D. Tajimi, T. Yamaguchi, T. Honda |
(LEDp3-11) Formation of Aluminum Templates Grown on(0001)4H-SiC for the GaN Growth by RF -MBE |
04/24 (水) |
Conference on LED and Its Industrial Application ' 13 (LEDIA'13) |
S. Fujioka, R. Amiya, T. Onuma, T. Yamaguchi, T. Honda |
(LEDp3-10) Surface Modification of GaN Crystals and Its Effectson Optical Properties |
04/24 (水) |
Conference on LED and Its Industrial Application ' 13 (LEDIA'13) |
T. Yasuno, T. Oda, H.Nagai, H. Hara, Y. Sugiura, T. Yamaguchi, M. Sato, T. Honda |
(LEDp3-9) Fabrication of Ga-In-O Films by Molecular PrecursorMethod |
04/24 (水) |
Conference on LED and Its Industrial Application ' 13 (LEDIA'13) |
T. Hatakeyama, T.Yamaguchi, D. Tajimi, Y. Sugiura, T. Honda |
(LEDp3-8) Growth of GaN on alfa-Ga2O3/ Sapphire Template by RF-MBE |
04/24 (水) |
Conference on LED and Its Industrial Application ' 13 (LEDIA'13) |
T. Yamaguchi | (LED2) Session Chair |
04/23 (火) |
Conference on LED and Its Industrial Application ' 13 (LEDIA'13) |
Y. Nanishi, T. Yamaguchi, K. Wang, T. Araki, E. Yoon |
(Invited/LED1-1)Recent Progress on InN and InGaN Growth for Future Optoelectronic Devices |
04/19 (金) |
Applied Physics Express 6, 056601-1-4 (2013) |
R. J. J. Rioboo, C. Prieto, R. Cusco, L. Artus, C. Boney, A. Bensaoula, T. Yamaguchi, Y. Nanishi |
Temperature Dependence of Surface Acoustic Wave Propagation Velocity in InxGa1-xN Films Obtained by High-Resolution Brillouin Spectroscopy: Determination of Temperature Coefficient of Frequency |
02/01 (金) |
physica status solidi (c) 10, 869-872 (2013) |
T. Onuma, T. Yamaguchi, T. Honda |
Electron-beamincident-angleresolved cathodoluminescence studies on bulk ZnO crystals |